The diffusivity of Si was measured by monitoring the diffusion of surface deposits of 30Si, and determining the concentration profiles by using resonance broadening techniques. A slight difference in the results was found between n-type and p-type material. The diffusion in the intrinsic material, at 650 to 900C, was described by:

D (cm2/s) = 2.4 x 10-1 exp[-2.9(eV)/kT]

J.Räisänen, J.Hirvonen, A.Anttila: Solid State Electronics, 1981, 24[4], 333-6

The best linear fits to the solute diffusion data ([93] to [120]) yield:

H: Ln[Do] = 0.89E – 33.6 (R2 = 0.92); Li: Ln[Do] = 1.06E – 18.8 (R2 = 0.95);

Sb: Ln[Do] = 0.30E – 14.5 (R2 = 0.63)