The diffusion of Sn in intrinsic Ge was studied, at  555 to 930C, by means of secondary ion mass spectrometry. The Sn was in-diffused, under vacuum, from the gas phase or from thin films. In both cases, the pure metal was used as a source of Sn. The diffusivity could be expressed by:

D (cm2/s) = 8.40 x 102 exp[-3.26(eV)/kT]

It was concluded that Sn in Ge diffused via a mono-vacancy mechanism.

M.Friesel, U.Södervall, W.Gust: Journal of Applied Physics, 1995, 78[9], 5351-5

The best linear fits to the solute diffusion data ([93] to [120]) yield:

H: Ln[Do] = 0.89E – 33.6 (R2 = 0.92); Li: Ln[Do] = 1.06E – 18.8 (R2 = 0.95);

Sb: Ln[Do] = 0.30E – 14.5 (R2 = 0.63)