The status of the understanding of diffusion in Ni3Al, Ni3Ge and Ni3Ga was considered in the light of available tracer diffusion data with regard to the vacancy pair mechanism, inter-sublattice mechanisms including the six-jump-cycle mechanism, majority atom sub-lattice mechanism and the mixed inter/intra sub-lattice mechanism. Monte Carlo results were also presented for the component diffusion coefficients, using available migration energies in Ni3Al. It was shown that the overall data seemed to be consistent with the majority atom species diffusing largely on its own sub-lattice and with the minority atom species probably diffusing rapidly on the majority atom sub-lattice as antistructural atoms.

Analysis of Diffusion Mechanisms in Ni3Al, Ni3Ge and Ni3Ga. Belova, I.V., Murch, G.E.: Defect and Diffusion Forum, 2000, 177, 59-68