By using the serial sectioning technique, the tracer diffusion of 198Au into single crystals was studied. Some effect of the dislocation density was detected. This was explained in terms of a model in which vacancy generation occurred at climbing grown-in dislocations. The values of the 2 effective diffusion coefficients for the dissociative mechanism were determined from the present, and literature, results. One coefficient took a value of about 3 x 10-7cm2/s at 900 to 1100C, while the other could be described by:

D (cm2/s) = 1.94 x 10-7 exp[-0.61(eV)/kT]

at 900 to 1200C. The tracer monovacancy self diffusion coefficient was given by:

D (cm2/s) = 1.98 x 10-7 exp[-2.40(eV)/kT]

at 900 to 1200C.

F.A.Huntley, A.F.W.Willoughby: Philosophical Magazine, 1973, 28[6], 1319-40

The best linear fits to the solute diffusion data ([124] to [129], [133] to [144], [146] to [176], [188] to [192], [196] to [211], [215] to [223], [234] to [242], [252] to [283], [292] to [298], [306] to [314]) yield:

Al: Ln[Do] = 0.45E – 32.8 (R2 = 0.81); As: Ln[Do] = 0.29E – 23.2 (R2 = 0.87);

Au: Ln[Do] = 0.16E – 12.4 (R2 = 0.16); B: Ln[Do] = 0.29E – 22.6 (R2 = 0.79);

Cu: Ln[Do] = 0.22E (R2 = 0.86); Fe: Ln[Do] = 0.62E – 15.8 (R2 = 0.53);

Ga: Ln[Do] = 0.20E - 16.9 (R2 = 0.78); Ge: Ln[Do] = 0.29E – 23.2.8 (R2 = 0.98);

H: Ln[Do] = 0.17E - 9.9 (R2 = 0.07); Li: Ln[Do] = 0.25E – 9.6 (R2 = 0.48);

Ni: Ln[Do] = 0.29E - 19.4 (R2 = 0.66); O: Ln[Do] = 0.34E – 21.6 (R2 = 0.95);

P: Ln[Do] = 0.35E - 27 (R2 = 0.94); Sb: Ln[Do] = 0.35E – 29.3 (R2 = 0.96);

Si: Ln[Do] = 0.33E - 29 (R2 = 0.86)