Rutherford back-scattering channelling spectrometry was used to analyze the lattice disorder which was produced by the implantation, of 300keV Hf ions into rutile monocrystals at 77K to a dose of 5 x 1014/cm2, and during isochronal annealing at up to 1500K. After implantation at 77K, the implanted region was channelling-amorphous. Recovery of the disorder occurred in a first annealing stage at temperatures of between 500 and 800K. Here, the disorder peak area decreased by about 20%. A second annealing stage occurred at temperatures of between 1000 and 1300K, where the width decreased and reflected epitaxial solid-phase re-growth. The recovery was complete at 1273K. It was noted that Hf started to diffuse towards the surface, to form a surface peak, at about 800K. At 1100K, a triple peak was formed. In-diffusion of Hf occurred at 1270K or higher and revealed a substitutional fraction of about 100%. The implantation of 8 x 1014Hf/cm2 at 1070K resulted in a substitutional component of 80%.

Channeling Studies of Hf Implanted into TiO2 Single Crystals: Lattice Disorder and Lattice Location. Khubeis, I., Meyer, O.: Materials Chemistry and Physics, 1994, 38, 284-8