The p-n junction and resistivity methods were used to study the diffusion of B into the (111) and (100) planes of single crystals with various B surface concentrations. The diffusivity of B into the (100) plane was found to be higher than that into the (111) plane. The higher the B surface concentration, the higher was the diffusivity and the lower was the activation energy for B diffusion:

(111), 8 x 1019B/cm3:     D (cm2/s) = 1.40 x 102 exp[-4.09(eV)/kT]

(111), 2 x 1020B/cm3:     D (cm2/s) = 9.50 x 101 exp[-4.04(eV)/kT]

(111), 1 x 1021B/cm3:     D (cm2/s) = 8.20 x 100 exp[-3.65(eV)/kT]

(100), 8 x 1019B/cm3:     D (cm2/s) = 1.20 x 102 exp[-4.04(eV)/kT]

(100), 2 x 1020B/cm3:     D (cm2/s) = 3.00 x 100 exp[-3.57(eV)/kT]

(100), 1 x 1021B/cm3:     D (cm2/s) = 1.90 x 100 exp[-3.48(eV)/kT]

M.Katsuta, T.Ouchiyama: Shin Nippon Denki Giho, 1970, 5[1], 9-14

The best linear fits to the solute diffusion data ([124] to [129], [133] to [144], [146] to [176], [188] to [192], [196] to [211], [215] to [223], [234] to [242], [252] to [283], [292] to [298], [306] to [314]) yield:

Al: Ln[Do] = 0.45E – 32.8 (R2 = 0.81); As: Ln[Do] = 0.29E – 23.2 (R2 = 0.87);

Au: Ln[Do] = 0.16E – 12.4 (R2 = 0.16); B: Ln[Do] = 0.29E – 22.6 (R2 = 0.79);

Cu: Ln[Do] = 0.22E (R2 = 0.86); Fe: Ln[Do] = 0.62E – 15.8 (R2 = 0.53);

Ga: Ln[Do] = 0.20E - 16.9 (R2 = 0.78); Ge: Ln[Do] = 0.29E – 23.2.8 (R2 = 0.98);

H: Ln[Do] = 0.17E - 9.9 (R2 = 0.07); Li: Ln[Do] = 0.25E – 9.6 (R2 = 0.48);

Ni: Ln[Do] = 0.29E - 19.4 (R2 = 0.66); O: Ln[Do] = 0.34E – 21.6 (R2 = 0.95);

P: Ln[Do] = 0.35E - 27 (R2 = 0.94); Sb: Ln[Do] = 0.35E – 29.3 (R2 = 0.96);

Si: Ln[Do] = 0.33E - 29 (R2 = 0.86)