A direct-current reactive plasma sputtering technique was used to obtain a B diffusion source in the form of a borosilicate glass. The sheet resistance of Si was measured by using a 4-point probe technique, and the depth of the diffusion layer was determined by lapping and staining. The B diffusivity, as a function of B surface concentration, was described by:

3 x 1018B2O3/cm3:     D (cm2/s) = 4.50 x 104 exp[-4.84(eV)/kT]

6 x 1019B2O3/cm3:     D (cm2/s) = 1.00 x 103 exp[-4.37(eV)/kT]

1 x 1020B2O3/cm3:     D (cm2/s) = 1.00 x 10-2 exp[-2.95(eV)/kT]

5 x 1020B2O3/cm3:     D (cm2/s) = 2.50 x 10-3 exp[-2.72(eV)/kT]

G.D.Bagratishvili, R.B.Dzhanelidze, D.A.Jishiashvili, L.V.Piskanovski, Z.N.Shiolashvili: Physica Status Solidi A, 1979, 56[1], 27-35

The best linear fits to the solute diffusion data ([124] to [129], [133] to [144], [146] to [176], [188] to [192], [196] to [211], [215] to [223], [234] to [242], [252] to [283], [292] to [298], [306] to [314]) yield:

Al: Ln[Do] = 0.45E – 32.8 (R2 = 0.81); As: Ln[Do] = 0.29E – 23.2 (R2 = 0.87);

Au: Ln[Do] = 0.16E – 12.4 (R2 = 0.16); B: Ln[Do] = 0.29E – 22.6 (R2 = 0.79);

Cu: Ln[Do] = 0.22E (R2 = 0.86); Fe: Ln[Do] = 0.62E – 15.8 (R2 = 0.53);

Ga: Ln[Do] = 0.20E - 16.9 (R2 = 0.78); Ge: Ln[Do] = 0.29E – 23.2.8 (R2 = 0.98);

H: Ln[Do] = 0.17E - 9.9 (R2 = 0.07); Li: Ln[Do] = 0.25E – 9.6 (R2 = 0.48);

Ni: Ln[Do] = 0.29E - 19.4 (R2 = 0.66); O: Ln[Do] = 0.34E – 21.6 (R2 = 0.95);

P: Ln[Do] = 0.35E - 27 (R2 = 0.94); Sb: Ln[Do] = 0.35E – 29.3 (R2 = 0.96);

Si: Ln[Do] = 0.33E - 29 (R2 = 0.86)