Tin ions of 260keV, at doses of between 5 x 1013 and 6 x 1015Sn+/cm2, were implanted into <001>- and <100>-oriented single-crystals at 300 and 1100K; either along the crystal axis or 16° off-axis. Annealing experiments were performed at 900, 1000 and 1100K. The Sn profiles and the lattice location of Sn were determined by Rutherford back-scattering and channelling. Angular scan measurements for low-dose implants revealed Sn dip curves, which were wider (about 10% in <001> and 5% in <100>) and deeper (about 20 to 50%) than the Ti dip curves. With increasing Sn dose, the absolute values of the widths and the minimum yields increased due to radiation damage. The difference in the angular widths decreased while the minimum yields of Sn were still smaller than those of Ti, especially for channelled implants with reduced damage levels at similar doses. Annealing to 900 and 1000K restored the differences of the widths. Annealing to 1100K and implantation at 1100K led to appreciable diffusion of Sn, and about 93 and 78%, respectively, of the diffused component in the tail region was substitutional on Ti lattice sites while the difference of the angular widths of the near-surface component increased to 20%. The dip curves of the as-implanted and near-surface Sn component being wider and deeper than those of Ti indicated that coherent Sn-precipitates could form, revealing their own channelling pattern.

Tin Implanted in Rutile Single-Crystals: Lattice Location, Diffusion and Precipitation. Fromknecht, R., Khubeis, I., Meyer, O.: Nuclear Instruments and Methods in Physics Research B, 2000, 166, 322-8