The Bi was in-diffused from a spin-on source, and the specimens were annealed at 1050 to 1200C. The resultant Bi profiles were measured by using sheet resistivity and etching techniques. The profiles could be described by the complementary error function, and the diffusivity could be described by:

D (cm2/s) = 2.0 x 10-4 exp[-2.50(eV)/kT]

Y.Ishikawa, K.Yazaki, I.Nakamichi: Japanese Journal of Applied Physics, 1989, 28[7], 1272-3