Co-doped rutile TiO2 films were synthesized by ion implantation. Variable energy positron annihilation Doppler broadening spectroscopy and coincidence Doppler broadening measurements were performed for identification of the vacancies. A newly formed type of vacancy could be concluded by the S-W plot and the CDB results indicated that the oxygen vacancy (VO) complex Ti-Co-VO and/or Ti-VO were formed with Co ions implantation and the vacancy concentration was increased with increase of dopant dose.

Vacancy Identification in Co+ Doped Rutile TiO2 Crystal with Positron Annihilation Spectroscopy. Qin, X.B., Zhang, P., Liang, L.H., Zhao, B.Z., Yu, R.S., Wang, B.Y., Wu, W.M.: Journal of Physics - Conference Series, 2011, 262[1], 012051