By using the spreading resistance technique, a study was made of diffusion into (111) samples from doped epitaxial source layers which were deposited in a flowing H2 atmosphere. Under intrinsic conditions, the dopant profiles exhibited Fickian behavior. It was found that, at 1190 to 1394C, the data could be described by:

D (cm2/s) = 1.08 x 100 exp[-3.85(eV)/kT]

The results were consistent with a point defect mechanism which involved a closely coupled vacancy-impurity complex.

R.N.Ghoshtagore: Physical Review B, 1971, 3[2], 397-403