Room temperature ferromagnetism was observed in HfO2, TiO2, and In2O3 films grown on Y-stabilized zirconia, LaAlO3, and MgO substrates, respectively. While the magnetic moment was rather modest in the case of In2O3 films, it was very large in the other two cases. The thin-film form, which might create necessary defects and/or O vacancies, was thought be the main reason for undoped semiconducting and insulating oxides becoming ferromagnetic. From the results, a serious question arose if a transition-metal doping indeed played any essential role in producing ferromagnetism in non-magnetic oxides.

Magnetism Due to Oxygen Vacancies and/or Defects in Undoped Semiconducting and Insulating Oxide Thin Films. Hong, N.H., Sakai, J., Gervais, F.: Journal of Magnetism and Magnetic Materials, 2007, 316[2], 214-7