Single crystals of rutile were implanted with 300keV Ar, Sn or W ions, at room temperature, to fluences of between 1015 and 1016/cm2. The lattice locations, ion ranges and damage distributions were determined using Rutherford back-scattering channelling. It was found that the implanted Sn and W atoms were entirely substitutional on Ti sites, for the present fluences, where the radiation damage did not reach the random level. A large increase in conductivity was observed, for all of the implanted species, when the dpa value was less than unity. At higher dpa, the conductivity reached a saturation value for Ar implantation. In the case of W or Sn implantation, a further increase in conductivity occurred. At temperatures of between 70 and 293K, the logarithm of the conductivity was proportional to the inverse square-root of the temperature, for Ar and W. In the case of Sn, it was proportional to the inverse fourth-root of the temperature.

Lattice Location and Electrical Conductivity in Ion Implanted TiO2 Single Crystals. Fromknecht, R., Auer, R., Khubeis, I., Meyer, O.: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 252-6