The migration of Cr was studied by using radiochemical and electrical methods. At a diffusion temperature of 1250C, the dopant profile could be approximated by an error function. By assuming that the error function relationship also held at lower temperatures, the diffusivity at 1100 to 1250C was determined by using the p-n junction method and was found to be described by:

D (cm2/s) = 1.0 x 10-2 exp[-1.0(eV)/kT]

W.Wuerker, K.Roy, J.Hesse: Materials Research Bulletin, 1974, 9[7], 971-70