The transport of ion-implanted F in amorphous material was studied by using secondary ion mass spectroscopy and transmission electron microscopy. Significant redistribution of F was observed at 600 to 700C. It was found that the results could be described by:

D (cm2/s) = 1.0 x 10-1 exp[-2.2(eV)/kT]

The F transport was affected by implantation-induced defects.

G.R.Nash, J.F.W.Schiz, C.D.Marsh, P.Ashburn, G.R.Booker: Applied Physics Letters, 1999, 75[23], 3671-3