Arsenic-doped ZnO films were obtained via thermal diffusion from low-energy high-dose implanted silicon substrates using thermal treatment. The implantation conditions, such as dose and energy, were adjusted so as to allow more non-activated dopants in the surface region of the substrate and to out-diffuse into ZnO films efficiently. With the proper implantation dose and energy, the ZnO films exhibited p-type conduction, which increased the hole concentration and preservation time in the air ambient. The maximum carrier concentration of the As-doped ZnO films was 8.06 x 1018/cm3.

Effect of Arsenic Implantation Dose on p-type ZnO Films Obtained via Thermal Diffusion from Silicon Substrates. Huang, Y.J., Shih, M.F., Liu, C.C., Chu, S.Y., Lo, K.Y.: Electrochemical and Solid-State Letters, 2010, 13[11], H373-5