The effect of ion implantation leading to contamination and diffusion of lithium impurity in ZnO ceramics substrates was investigated. The diffusion coefficients of Li in the implanted ZnO annealed at 1000 and 850C were in good agreement with those in the non-implanted ZnO. At 700C, Li diffusion in the implanted ZnO was strongly enhanced. The results showed that the defects introduced by the implantation enhanced the impurity diffusion at low temperature annealing.

Impurity Contamination and Diffusion during Annealing in Implanted ZnO. Sakaguchi, I., Adachi, Y., Ogaki, T., Matsumoto, K., Hishita, S., Haneda, H., Ohashi, N.: Key Engineering Materials, 2009, 388, 23-6