Optical and structural properties of n-ZnO films grown on a p-Si (111) substrate by atomic layer deposition were observed using in situ synchrotron X-ray diffraction during annealing. The photoluminescence showed a complicated photon response with increasing annealing temperature. In situ X-ray diffraction indicated the growth of grains for an annealing temperature from 500 to 800 C with the orientation altering from polycrystalline to preferential (200). Measurements with a time-of-flight secondary-ion mass spectrometer indicated that the out-gassing of hydrogen atoms and ZnO/Si interdiffusion behavior were correlated with the intensity and position of emissions in photoluminescence spectra.

Annealing Effect on the Optical Response and Interdiffusion of N-ZnO/P-Si (111) Heterojunction Grown by Atomic Layer Deposition. Ku, C.S., Huang, J.M., Cheng, C.Y., Lin, C.M., Lee, H.Y.: Applied Physics Letters, 2010, 97[18], 181915

Figure 4

Diffusivity of Zn in Monocrystalline ZnO