The diffusion of Ge on (111)Si at high temperatures was studied experimentally by means of second-harmonic microscopy. The results could be described by:

D (cm2/s) = 6.0 x 102 exp[-2.48(eV)/kT]

C.E.Allen, R.Ditchfield, E.G.Seebauer: Physical Review B, 1997, 55[19], 13304-13