The diffusivity in amorphous material, at 500 to 700K, was measured by monitoring changes in the paramagnetic center profiles which arose from H interactions with dangling bonds. The values of the diffusion parameters depended upon the method of preparation:

electron-beam evaporated:     D (cm2/s) = 1 x 10-3 exp[-1.4(eV)/kT]

monosilane deposited:     D (cm2/s) = 2 x 10-4 exp[-1.2(eV)/kT]

ion-bombarded:     D (cm2/s) = 3 x 10-8 exp[-0.7(eV)/kT]

It was concluded that the diffusion of H in amorphous films, produced by ion bombardment, was controlled by the capture of H at dangling bonds. In samples which were prepared by evaporation, or the decomposition of monosilane, the principal mechanism was concluded to be the capture of H by pores and micropores.

A.V.Dvurechenski, I.A.Ryazantsev, L.S.Smirnov: Fizika i Tekhnika Poluprovodnikov, 1982, 16[4], 621-4

The best linear fits to the solute diffusion data ([124] to [129], [133] to [144], [146] to [176], [188] to [192], [196] to [211], [215] to [223], [234] to [242], [252] to [283], [292] to [298], [306] to [314]) yield:

Al: Ln[Do] = 0.45E – 32.8 (R2 = 0.81); As: Ln[Do] = 0.29E – 23.2 (R2 = 0.87);

Au: Ln[Do] = 0.16E – 12.4 (R2 = 0.16); B: Ln[Do] = 0.29E – 22.6 (R2 = 0.79);

Cu: Ln[Do] = 0.22E (R2 = 0.86); Fe: Ln[Do] = 0.62E – 15.8 (R2 = 0.53);

Ga: Ln[Do] = 0.20E - 16.9 (R2 = 0.78); Ge: Ln[Do] = 0.29E – 23.2.8 (R2 = 0.98);

H: Ln[Do] = 0.17E - 9.9 (R2 = 0.07); Li: Ln[Do] = 0.25E – 9.6 (R2 = 0.48);

Ni: Ln[Do] = 0.29E - 19.4 (R2 = 0.66); O: Ln[Do] = 0.34E – 21.6 (R2 = 0.95);

P: Ln[Do] = 0.35E - 27 (R2 = 0.94); Sb: Ln[Do] = 0.35E – 29.3 (R2 = 0.96);

Si: Ln[Do] = 0.33E - 29 (R2 = 0.86)