Nitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by post-implantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N+ implantation and the effect of air annealing. The N+ implantation enhanced the electron trap at EC-0.31eV (E3) and introduced another one at EC-0.95eV (D1), which were removed after annealing at 900 and 750C, respectively. Another trap D2 (Ea = 0.17eV) was formed after the 750C annealing and persisted at 1200C.

Deep Level Defects in a Nitrogen-Implanted ZnO Homogeneous p-n Junction. Gu, Q.L., Ling, C.C., Brauer, G., Anwand, W., Skorupa, W., Hsu, Y.F., Djurišić, A.B., Zhu, C.Y., Fung, S., Lu, L.W.: Applied Physics Letters, 2008, 92[22], 222109