An investigation of In diffusion in p- and n+ Si substrates revealed that a contribution which was associated with neutral point defects was predominant. This could be described by:

D (cm2/s) = 1.44 x 100 exp[-3.57(eV)/kT]

This was almost the same as the expression for intrinsic B diffusion. The out-diffusion of In was significant, and the surface transport coefficient could be approximated as being infinite.

K.Suzuki, H.Tashiro, T.Aoyama: Solid-State Electronics, 1999, 43[1], 27-31