The nature of intrinsic defects in ZnO films grown by metal organic vapour phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying various growth temperatures (325 to 485 C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.

Changing Vacancy Balance in ZnO by Tuning Synthesis Between Zinc/Oxygen Lean Conditions. Venkatachalapathy, V., Galeckas, A., Zubiaga, A., Tuomisto, F., Kuznetsov, A.Y.: Journal of Applied Physics, 2010, 108[4], 046101