The present study focused on the photoluminescence properties of ZnO films prepared by the reaction of water and zinc. Temperature-dependent dilute magnetic semiconductors characteristics of the ZnO films were investigated in the range from 15 to 260K. The photoluminescence spectrum at 15K was dominated by neutral donor-bound exciton (D0X) emissions. The emission line at about 3.304eV could be due to the transition of free electrons to neutral acceptor states (eA0). It was suggested that the ultra-violet emission at room temperature could be attributed to the incorporation of eA0 and free-exciton transitions, rather than sole free excitons. According to the temperature behavior of green band, it was further

confirmed that the green emission was mainly related to the singly ionized oxygen vacancies.

Temperature Behavior of Electron-Acceptor Transitions and Oxygen Vacancy Recombinations in ZnO Thin Films. Meng, X., Shi, Z., Chen, X., Zeng, X., Fu, Z.: Journal of Applied Physics, 2010, 107[2], 023501