The annealing of Bi, Cr and Mn, implanted in ZnO, was studied by Rutherford back-scattering, ion channelling and secondary ion mass spectroscopy. Implantation of ∼1016ions/cm2 of any of these elements produced large concentrations of Zn interstitials, but no completely amorphous region. The temperature at which these interstitials anneal was a function of the implant species. Other defects produced by the implantation, which give rise to de-channeling and a consequent increased scattering probability in the tails of backscattering spectra, anneal at significantly higher temperature. This annealing was also a function of the implant species. Motion of the implant ions themselves did not occur when the interstitials anneal; it takes place above 700C for Bi and Mn, and above 1000C for Cr.

Annealing of Damage and Stability of Implanted Ions in ZnO Crystals. Sonder, E., Zuhr, R.A., Valiga, R.E.: Journal of Applied Physics, 1988, 64[8], 1140