Zinc oxide films were grown on silicon (100) substrates by single-source chemical vapor deposition. X-ray diffraction showed that ZnO thin films had a polycrystalline hexagonal wurtzite structure with (100) and (101) orientation, i.e., a-b-axis orientation. Atomic force microscopy and scanning electronic microscopy showed the films to be of relatively high density, with a smooth surface. X-ray photo-electron spectroscopy showed that the deposited films were very close to stoichiometry but contained a small number of zinc instead of O vacancies as normally found with ZnO films produced by other methods. These results were also confirmed by photoluminescence measurements.

Growth of a-b-Axis Orientation ZnO Films with Zinc Vacancies by SSCVD. Dai, L.P., Deng, H., Chen, G., Tang, C.F., Wei, M., Li, Y.: Vacuum, 2007, 81[8], 969-73