The calculated states of ideal vacancies in ZnS and ZnO were calculated using a Green's function method in conjunction with the tight-binding approximation. Whereas the anion vacancy states were not found inside the band-gap, it was found that the Zn vacancy induces bound states in the gap in the case of ZnS or resonant states just below the top of the valence band in the case of ZnO. Brief consideration was given to the relationship of the position of the levels to the ionicity of the material.

Study of Ideal Vacancies in ZnS and ZnO (Wurtzite). Barnoussi, M., Bouhelal, A., Albert, J.P., Gout, C.: Solid State Communications, 1983, 45[9], 845-7