The effect of 2.5MeV in situ electron irradiation at 4.2K upon the properties of monocrystalline ZnO was studied by means of photoluminescence and optically detected electron paramagnetic resonance. A new photoluminescence band was produced by the irradiation, and several annealing stages were observed upon annealing to room temperature; with the first starting at ~110K. Three new optically detected electron paramagnetic resonance signals were observed, in the photoluminescence, whose emergence and disappearance correlated with the photoluminescence changes. The annealing stages were taken to be evidence of host interstitial atom migration beginning during 110K annealing. No hyperfine structure was observed for the optically detected electron paramagnetic resonance signals, so the defects involved could not be identified.

Defects Produced in ZnO by 2.5MeV Electron Irradiation at 4.2K - Study by Optical Detection of Electron Paramagnetic Resonance. Gorelkinskii, Y.V., Watkins, G.D.: Physical Review B, 2004, 69[11], 115212