Ribbon crystals were irradiated in an electron microscope. Dislocation loops nucleated on stacking faults planes and in the matrix for accelerating voltages greater than 700keV at room temperature. Two types of loop, with Burgers vectors of b = ½c and b = a, existed in the matrix (where a = 1/3[21•0] and c = [00•1]). Loops with b = ½c + a/3, and those with b = ½c, were formed on the prismatic fault planes and basal fault planes, respectively. These loops were of interstitial type.

Structural Defects in Hot-Pressed Zinc Oxide. Moriyoshi, Y., Maruyama, O., Ikegami, T., Yamamura, H., Watanabe, A., Shirasaki, S.: Zeitschrift fur Physikalische Chemie, 1980, 122[2], 225-35