Thin nanobelts with an average width of 7.5nm were synthesized using vapour-phase transport. It was found that stacking faults directed the growth of the thin nanobelts along the <01•0> direction, with {2¯1•0} top/bottom surfaces and {00•1} side surfaces. The {00•2} stacking fault, with a translation of 1/3<01•0> extended throughout the entire length of the ZnO nanobelts. The growth steps at the {01•0} growth fronts resulted from the {00•2} stacking fault were believed to direct fast axial growth of the thin ZnO nanobelts.

Stacking Fault Directed Growth of Thin ZnO Nanobelt. Chen, Y.X., Zhao, X.Q., Sha, B., Chen, J.H.: Materials Letters, 2008, 62[15], 2369-71