Vertically aligned ZnO nanowire arrays were grown onto Al2O3 (006) and Zn/Al2O3 (006) substrates, under the same fabrication conditions, via metal-organic chemical phase deposition. Nanowires having in-plane or 30°-twist orientations with respect to Al2O3 were grown on Zn/Al2O3, whereas the nanowires formed on Al2O3 exhibited the 30°-twist orientation. In addition, intrinsic stacking faults were observed only in nanowires grown on Zn/Al2O3. The insertion of Zn layers changed the growth direction of the ZnO nanowires and produced the differences in morphology and structure. Deterioration of the optical characteristics of ZnO nanowires was also observed, due to crystalline defects such as stacking faults.

The Effect of Stacking Fault Formation on Optical Properties in Vertically Aligned ZnO Nanowires. Jeong, M.C., Lee, S.W., Seo, J.M., Myoung, J.M.: Nanotechnology, 2007, 18[30], 305701