The diffusivity was determined by using a radiation activation method which was based upon the fact that, under bombardment by inert-gas ions, N-gas molecules which were dissolved in the Si were released. Subsequent diffusion-annealing in a N atmosphere resulted in the migration of N atoms through substitutional positions. At 700 to 800C, the diffusivity could be described by:

D (cm2/s) = 5.0 x 10-2 exp[-3.65(eV)/kT]

N.V.Denisova, E.I.Zorin, P.V.Pavlov, D.I.Tetelbaum, A.F.Khokhlov: Izvestiya Akademii Nauk SSSR - Neorganicheskie Materialy, 1975, 11[12], 2236-7