The p-n junction method was used to investigate diffusion into p-type single crystals having no impurities other than B, and with a mean dislocation density of less than 1000/cm2. It was found that the results for 1100 to 1200C could be described by:

D (cm2/s) = 1.65 x 100 exp[-0.73(eV)/kT]

L.Svob: Solid State Electronics, 1967, 10[10], 991-6