The diffusion of SiIII-SiV neutral pairs versus the diffusion of SiIII-VIII complexes in III-V crystals was considered with regard to experimental data which revealed the effect of Si diffusion upon the self-diffusion of column-III and column-V lattice atoms. Secondary ion mass spectroscopy was used to compare the enhanced diffusion of column-III or column-V atoms in various Si-diffused heterostructures which were closely lattice-matched to GaAs. An enhancement of lattice atom self-diffusion, due to impurity diffusion, was found to occur predominantly on the column-III lattice. The data supported the SiIII-VIII diffusion model and indicated that the main native defects which accompanied Si diffusion were column-III vacancies. These diffused directly on the column-III sub-lattice.

Comparison of SiIII-SiV and SiIII-VIII Diffusion Models in III-V Heterostructures Lattice Matched to GaAs. D.G.Deppe, W.E.Plano, J.E.Baker, N.Holonyak, M.J.Ludowise, C.P.Kuo, R.M.Fletcher, T.D.Osentowski, M.G.Craford: Applied Physics Letters, 1988, 53[22], 2211-3