Enhanced layer interdiffusion in Te-doped (2 x 1017 to 3 x 1018/cm3) organometallic chemical vapor deposited superlattices was studied by using secondary ion mass spectrometry. It was found that, at temperatures ranging from 800 to 1000C, the Al diffusion coefficient had an activation energy of 3eV and was approximately proportional to the Te content. In the case of Si-induced mixing, the activation energy for Al diffusion was 4.1eV and exhibited a power-law dependence upon the Si content.

Study of Interdiffusion in a Te-Doped AlAs-GaAs Superlattice. P.Mei, S.A.Schwarz, T.Venkatesan, C.L.Schwartz, E.Colas: Journal of Applied Physics, 1989, 65[5], 2165-7