The diffusion of Zn into superlattices was studied by using transmission electron microscopy and secondary ion mass spectroscopy. It was found that micro-defects existed near to the Zn diffusion front. These defects were interstitial dislocation loops. It was suggested that the diffusion of Zn into the present materials was similar to Zn diffusion into GaAs. This was considered to be evidence for an interstitial mechanism for the enhancement of interdiffusion.

Zn Diffusion-Induced Disorder in AlAs/GaAs Superlattices. I.Harrison, H.P.Ho, B.Tuck, M.Henini, O.H.Hughes: Semiconductor Science and Technology, 1989, 4[10], 841-6