The diffusivity of ion-implanted Zn was deduced from secondary ion mass spectrometry profiles. Diffusion annealing was carried for various times at 750C. It was found that the diffusivity of Zn was proportional to the square of the Zn concentration. This implied the existence of local thermal equilibrium. The absolute values were 200 times smaller than those which had been reported for gaseous-source Zn diffusion at 650C in GaAs. The superlattice disordering rate increased with increasing Zn concentration and was attributed to the diffusion of positively charged interstitials such as Gan+ or Aln+, where n was between 2 and 3.

Ion-Implanted Zn Diffusion and Impurity-Induced Disordering of an AlGaAs Superlattice. E.P.Zucker, A.Hashimoto, T.Fukunaga, N.Watanabe: Applied Physics Letters, 1989, 54[6], 564-6