The migration of As in Hg0.82Cd0.18Te, grown by means of liquid phase epitaxy, was studied for the first time here by using both radio-tracer and secondary ion mass spectrometry techniques. The samples were diffused at 400C under equilibrium Hg vapor pressure conditions. It was found that there was good agreement between the radio-tracer and secondary ion mass spectrometry profiles, and the diffusion coefficient at 400C was deduced to be 8 x 10-15cm2/s.

Diffusion of Arsenic in Epitaxial CdxHg1−xTe. J.E.Falconer, H.D.Palfrey, G.W.Blackmore: Journal of Crystal Growth, 1990, 100[1-2], 275-8