Diffusion in liquid-phase epitaxially grown layers was studied using 108Cd and 122Te. A 2-layer structure was grown from In solutions at 250 to 300C. The first layer was normal CdTe, while the second was enriched in the isotopes.

Secondary ion mass spectrometry was then used to measure the Cd and Te concentrations as a function of depth; before and after annealing at 500C. The self-diffusion coefficient of Cd at 500C was about 3 x 10-13cm2/s (figure 1)

M.G.Astles, G.Blackmore: Journal of Electronic Materials, 1986, 15[5], 287-90

Figure 2

Diffusivity of Mn in CdTe as a Function of Temperature

(a: In-doped, b: undoped)