Diffusion anneals were carried out at temperatures ranging from 20 to 270C in evacuated silica ampoules, using diffusion sources of elemental I or CdI2; both under saturated vapor pressure conditions. The concentration profiles were measured by using radiotracer/sectioning or secondary ion mass spectrometric techniques. It was found that the profiles comprised 4 sections (table 2). A computer analysis which was based upon the sum of 4 complementary error functions gave satisfactory agreement with the data. The fastest diffusing component furnished diffusivity values which agreed with previously published data, but the overall results indicated that I which was diffused into CdTe from the vapor was not suitable as a long-term stable dopant when sharp junctions were required.

Incorporation of Iodine into CdTe by Diffusion. E.D.Jones, J.Malzbender, J.B.Mullin, N.Shaw: Journal of Crystal Growth, 1994, 138, 279-84