The diffusion of S in single crystals, at temperatures of between 372 and 675C, was investigated by means of secondary ion mass spectrometry. The diffusion was shown to be dominated by 2 mechanisms, with associated diffusivities which were described by:

D (cm2/s) = 2.5 x 10-8 exp[-1.06(eV)/kT]

and

D (cm2/s) = 4.9 x 10-4 exp[-1.7(eV)/kT]

Sulfur Diffusion in CdTe D.W.Lane, G.J.Conibeer, D.A.Wood, K.D.Rogers, P.Capper, S.Romani, S.Hearne: Journal of Crystal Growth, 1999, 197[3], 743-8