Layers of material, doped with various group-VI donors (S, Se, Te), were exposed to H plasma. By using secondary ion mass spectroscopy it was shown that, as in the case of Si-doped materials, the diffusivity of H depended strongly upon the AlAs content. Electronic measurements indicated that, after H diffusion, the electron concentration systematically decreased while their mobility increased; thus demonstrating the passivation of the group-VI donors by H.

Interactions between Hydrogen and Group VI Donors in GaAs and GaAlAs. B.Theys, B.Machayekhi, J.Chevallier, K.Somogyi, K.Zahraman, P.Gibart, M.Miloche: Journal of Applied Physics, 1995, 77[7], 3186-93