The diffusion of implanted Be in GaAs at 100keV, for doses of 1013 and 1014/cm2, was investigated. The observed secondary ion mass spectrometry profiles, obtained for annealing temperatures of 700 to 900C and annealing times of 60 to 240s, were simulated using various models for the kick-out mechanism while taking account of the so-called plus-one approach for Ga self-interstitial generation after implantation as well as the local Ga self-interstitial sink phenomenon. The diffusion differential equations for Be and Ga mobile species with initial and boundary conditions were solved numerically for each model by using the explicit finite-difference method.

Comparative Models for Diffusion of Implanted Beryllium in Gallium Arsenide. S.Koumetz, J.C.Pesant, C.Dubois: Journal of Physics - Condensed Matter, 2006, 18, L283-8