Layers of Be-doped material were grown at 300C by using the migration enhanced epitaxy technique. The layers exhibited essentially no electrical activation. Rapid thermal annealing of the layers resulted in a mobility and hole concentration which were comparable to those of conventional molecular beam epitaxial layers which were grown at 600C. Secondary ion mass spectroscopy showed that Be diffusion in annealed migration enhanced epitaxial layers was much smaller than that in conventional molecular beam epitaxial layers; especially highly-doped ones. Raman spectroscopy and 4K photoluminescence experiments were also performed. It was concluded that the migration enhanced epitaxy method could replace the conventional molecular beam epitaxy method in applications which required a high hole concentration and little diffusion.

Reduction of Be Diffusion in GaAs by Migration-Enhanced Epitaxy. B.Tadayon, S.Tadayon, W.J.Schaff, M.G.Spencer, G.L.Harris, P.J.Tasker, C.E.C.Wood, L.F.Eastman: Applied Physics Letters, 1989, 55[1], 59-61