Abrupt Be doping profiles were obtained by means of organometallic vapor phase epitaxy. Secondary ion mass spectroscopy was used to study the annealing behavior of profiles for Be concentrations of 2 x 1018/cm3. The diffusion fronts were non-Gaussian and abrupt. Estimates of the diffusion coefficient of Be were obtained by assuming a quadratic concentration dependence. The Be diffusion coefficient was equal to about 10-15 cm2/s at 825C. This was at least an order of magnitude lower than that reported for Zn profiles which were grown by means of organometallic vapor phase epitaxy. In addition, anomalous surface tailing growth was observed. This was very similar to that which was reported to occur during Be doping via molecular beam epitaxy.

Growth and Diffusion of Abrupt Beryllium-Doped Profiles in Gallium Arsenide by Organometallic Vapor Phase Epitaxy. M.J.Tejwani, H.Kanber, B.M.Paine, J.M.Whelan: Applied Physics Letters, 1988, 53[24], 2411-3