The diffusion of Cu in semi-insulating liquid-encapsulated Czochralski-type material at 800C was studied by using photoluminescence, photo-etching, secondary ion mass spectroscopic, and temperature-dependent Hall techniques. The results indicated a diffusivity of 4.5 x 10-6cm2/s. It was deduced that diffusion occurred mainly by substitution on lattice sites. The Cu migrated preferentially along the walls of the dislocation cells.

New Aspects of Copper Diffusion in Semi-Insulating Gallium Arsenide. S.Griehl, M.Herms, J.Klöber, J.R.Niklas, W.Siegel: Applied Physics Letters, 1996, 69[12], 1767-9