Hydrogenated (deuterated) C-doped layers were exposed to a D(H) plasma, and the diffusion profiles were measured by secondary ion mass spectroscopy. They were compared with those obtained by the exposure of as-grown samples to identical plasma conditions. It was shown that partial substitution of D(H) for H(D) occurred as a consequence of a breaking of the original H(D)–acceptor complexes. It was also demonstrated that, after the break, released H(D) species were trapped in the vicinity of the acceptor with which they originally formed a complex.

Diffusion of Deuterium (Hydrogen) in Previously Hydrogenated (Deuterated) III–V Semiconductors. B.Theys, F.Jomard: Journal of Applied Physics, 2003, 93[8], 4590-3