The structural properties of samples which had been implanted with 150 or 400keV Fe, to doses of between 1012 and 1015/cm2, were studied. The depth distributions of the implants were compared before and after annealing with, or without, a Si3N4 cap. Rutherford back-scattering, X-ray double-crystal diffractometry, and secondary ion mass spectroscopy results indicated that Fe was markedly redistributed in all of the materials during annealing. On the other hand, Ti did not redistribute at all. The driving force for the redistribution of Fe was thought to be not classical diffusion, but reaction with implantation-induced defects and stoichiometric imbalances. The defect chemistry of as-implanted arsenides was found to be fundamentally different to that of as-implanted phosphides since, in the latter case, the mass ratio of the constituents was much greater and the specific energy for amorphization was much lower.

Defect-Induced Redistribution of Fe- or Ti-Implanted and Annealed GaAs, InAs, GaP, and InP. H.Ullrich, A.Knecht, D.Bimberg, H.Kräutle, W.Schlaak: Journal of Applied Physics, 1992, 72[8], 3514-21