Diffusion was studied in samples of molecular beam epitaxial material with grown-in Be. The diffusion profiles of samples which had been annealed under various conditions were determined by using secondary ion mass spectrometry, and a computer simulation was used to analyze the experimental results and extract diffusion parameters. It was deduced that the Ga interstitial diffusivity was described by:

D(cm2/s) = 6.4 x 10-5 exp[-1.28(eV)/kT]

while the equilibrium concentration of Ga interstitials was described by:

C(/cm3) = 4.7 x 1028 exp[-3.25(eV)/kT]

Modeling the Diffusion of Grown-In in Be in Molecular Beam Epitaxy GaAs. J.C.Hu, M.D.Deal, J.D.Plummer: Journal of Applied Physics, 1995, 78[3], 1595-605