Radiotracer methods were used to study the migration of Ni at 800 to 1300C. The diffusion coefficient ranged from 10-5 to 10-4cm2/s, and obeyed:

D (cm2/s) = 2.0 x 10-3 exp[-0.47(eV)/kT]

The majority of Ni atoms were neutral and formed interstitial solid solutions. The electrically-active Ni atoms were located on Si lattice sites and amounted to 0.1% of the total Ni content. The total concentration of Ni was independent of the nature and concentration of defects. The Ni atoms diffused via a mainly interstitial mechanism.

M.K.Bakhadyrkhanov, S.Zainabidinov, A.Khamidov: Fizika i Tekhnika Poluprovodnikov, 1980, 14[2], 412-3 (abstract only given)

The best linear fits to the solute diffusion data ([124] to [129], [133] to [144], [146] to [176], [188] to [192], [196] to [211], [215] to [223], [234] to [242], [252] to [283], [292] to [298], [306] to [314]) yield:

Al: Ln[Do] = 0.45E – 32.8 (R2 = 0.81); As: Ln[Do] = 0.29E – 23.2 (R2 = 0.87);

Au: Ln[Do] = 0.16E – 12.4 (R2 = 0.16); B: Ln[Do] = 0.29E – 22.6 (R2 = 0.79);

Cu: Ln[Do] = 0.22E (R2 = 0.86); Fe: Ln[Do] = 0.62E – 15.8 (R2 = 0.53);

Ga: Ln[Do] = 0.20E - 16.9 (R2 = 0.78); Ge: Ln[Do] = 0.29E – 23.2.8 (R2 = 0.98);

H: Ln[Do] = 0.17E - 9.9 (R2 = 0.07); Li: Ln[Do] = 0.25E – 9.6 (R2 = 0.48);

Ni: Ln[Do] = 0.29E - 19.4 (R2 = 0.66); O: Ln[Do] = 0.34E – 21.6 (R2 = 0.95);

P: Ln[Do] = 0.35E - 27 (R2 = 0.94); Sb: Ln[Do] = 0.35E – 29.3 (R2 = 0.96);

Si: Ln[Do] = 0.33E - 29 (R2 = 0.86)